FQT7N10L دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FQT7N10L
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حجم فایل
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903.091
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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Manufacturer:
ON Semiconductor
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Series:
QFET®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
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Current - Continuous Drain (Id) @ 25°C:
1.7A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
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Rds On (Max) @ Id, Vgs:
350mOhm @ 850mA, 10V
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Vgs(th) (Max) @ Id:
2V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
6nC @ 5V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
290pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
2W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SOT-223-4
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Package / Case:
TO-261-4, TO-261AA
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Base Part Number:
FQT7
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detail:
N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4
